IN3LBQ on the Hühnerspiel (Amthorspitze) - photo by IN3OTD

Renesas NE5500234 LDMOS model

Under construction...

The Renesas NE5500234 is a low power LDMOS.

Model for Vdd=3.8 V and Idd= 100 mA

Typical S-parameters for this device can be found on the Renesas web site, for a supply voltage of 3.8 V and a drain current of 100 mA.

Using the extraction method previously described, considering only the S-parameters from 300 MHz to 1 GHz, the following small-signal model parameters are determined:

Rg = 0.9 ohm
Rd = 0.53 ohm
Rs = 0.13 ohm
Lg = 0.57 nH
Ld = 0.61 nH
Ls = 0.012 nH
Cgs = 13.5 pF
Cds = 14.8 pF
Cgd = 2.3 pF
gm = 0.56 S
gds = 15.8 mS
So the equivalent small-signal circuit for this LDMOS at 100 mA drain current is the following: NE5500234 small-signal model - 100mA Smith chart with measured vs. model S-parameters: measured vs. modeled NE5500234 S-parameters - 100 mA S-parameters fitting details - fitted region is in white background: NE5500234 S11 100mA NE5500234 S12 100mA NE5500234 S21 100mA NE5500234 S22 100mA